2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 1 october 2011 2n3904 / mmbt3904 / pzt3904 npn general purpose amplifier features ? this device is designed as a general purpose amplifier and switch. ? the useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. absolute maximum ratings* t a = 25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be cons ulted on applicati ons involving pulsed or low duty cycle operations. thermal characteristics t a = 25 c unless otherwise noted * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06". ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 200 ma t j, t stg operating and storage junction temperature range -55 to +150 c symbol parameter max. units 2n3904 *mmbt3904 **pzt3904 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 125 c/w 2n3904 mmbt3904 pzt3904 ebc to-92 sot-23 sot-223 mark:1a c b e e b c c
2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% ordering information symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage i c = 1.0ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i bl base cutoff current v ce = 30v, v eb = 3v 50 na i cex collector cutoff current v ce = 30v, v eb = 3v 50 na on characteristics* h fe dc current gain i c = 0.1ma, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v 40 70 100 60 30 300 v ce(sat) collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.2 0.3 v v v be(sat) base-emitter satu ration voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.65 0.85 0.95 v v small signal characteristics f t current gain - bandwidth product i c = 10ma, v ce = 20v, f = 100mhz 300 mhz c obo output capacitance v cb = 5.0v, i e = 0, f = 1.0mhz 4.0 pf c ibo input capacitance v eb = 0.5v, i c = 0, f = 1.0mhz 8.0 pf nf noise figure i c = 100 a, v ce = 5.0v, r s = 1.0k , f = 10hz to 15.7khz 5.0 db switching characteristics t d delay time v cc = 3.0v, v be = 0.5v i c = 10ma, i b1 = 1.0ma 35 ns t r rise time 35 ns t s storage time v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma 200 ns t f fall time 50 ns part number marking package packing method pack qty 2N3904BU 2n3904 to-92 bulk 10000 2n3904ta 2n3904 to-92 ammo 2000 2n3904tar 2n3904 to-92 ammo 2000 2n3904tf 2n3904 to-92 tape reel 2000 2n3904tfr 2n3904 to-92 tape reel 2000 mmbt3904 1a sot-23 tape reel 3000 mmbt3904_d87z 1a sot-23 tape reel 10000 pzt3904 3904 sot-223 tape reel 2500
2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 3 typical performance characteristics base-emitter on voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(on) c v = 5v ce 25 c 125 c - 40 c base-emitter saturation voltage vs collector current 0.1 1 10 100 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltage (v) besat c = 0.1 1 10 100 0.05 0.1 0.15 i - collector current (ma) v - collector-emitter voltage (v) cesat 25 c c = 25 50 75 100 125 150 0.1 1 10 100 500 t - ambient temperature ( c) i - collector current (na) a v = 30v cb cbo capacitance vs reverse bias voltage 0.1 1 10 100 1 2 3 4 5 10 reverse bias voltage (v) capacitance (pf) c obo c ibo f = 1.0 mhz typical pulsed current gain vs collector current 0. 1 1 10 1 00 0 100 200 300 400 500 i - collector current (ma) h - typ ical pulsed current gain fe - 40 c 25 c c v = 5v ce 125 c
2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 4 typical performance characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 sot-23 to-92 noise figure vs frequency 0.1 1 10 100 0 2 4 6 8 10 12 f - frequency (khz) nf - noise figure (db) v = 5.0v ce i = 100 = = = = = = = 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) i = 100 = = = 0 40 60 80 100 120 140 160 20 180 current gain and phase angle vs frequency 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 f - frequency (mhz) h - current gain (db) = = 110100 5 10 100 500 i - collector current (ma) time (ns) i = i = b1 c b2 i c 10 40v 15v 2.0v t @ v = 0v cb d t @ v = 3.0v cc r rise time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - rise time (ns) i = i = b1 c b2 i c 10 t = 125c t = 25c j v = 40v cc r j a k a p a : : p a ( k )
2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 5 typical performance characteristics (continued) storage time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - storage time (ns) i = i = b1 c b2 i c 10 s t = 125c t = 25c j j fall time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - fall time (ns) i = i = b1 c b2 i c 10 v = 40v cc f t = 125c t = 25c j j current gain 0.1 1 10 10 100 500 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz t = 25 c a o output admittance 0.1 1 10 1 10 100 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1.0 khz t = 25 c a o 0.1 1 10 0.1 1 10 100 i - collector current (ma) h - input impedance (k ) v = 10 v ce c ie f = 1.0 khz t = 25 c a o 0.1 1 10 1 2 3 4 5 7 10 i - collector current (ma) h - voltage feedback ratio (x10 ) v = 10 v ce c re f = 1.0 khz t = 25 c a o _ 4 (k ) n h os
2n3904 / mmbt3904 / pzt3904 ? npn genera l purpose amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com 2n3904 / mmbt3904 / pzt3904 rev. b0 6 test circuits 10 k 3.0 v 275 t 1 c 1 < < < < < 4.0 pf duty cycle = = = = = 2% duty cycle = = = = = 2% < < < < < 1.0 ns - 0.5 v 300 ns 10.6 v 10 < < < < < t 1 < < < < < 500 s 10.9 v - 9.1 v < < < < < 1.0 ns 0 0 10 k 3.0 v 275 c 1 < < < < < 4.0 pf 1n916 figure 2: storage and fall time equivalent test circuit figure 1: delay and rise time equivalent test circuit 300ns = < 1.0ns < 4.0pf < 4.0pf < 1.0ns = 10 < t 1 < 500 s k k
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